AW-2001eR Microwave Plasma Etcher

AW-2001eR Microwave Plasma Etcher Description:

The AW·2001R single-wafer Thin Films Etcher is an automated tool designed as a flexible downstream Microwave system for high-volume wafer fabrication. AW·2001R is in direct response to manufacturer's concerns for wafer damage. uniformity, uptime, reliability and production-proven technology.

Key Features:

• Production-proven Plasma Etching System.
• NO DAMAGE Downstream Plasma (SO.I Volt CV-shift).
• "Extended" Alumina Plasma Tube for better Uniformity.
• Frontslde Isotropic etch. Backside etch if pins-up.
• 75mm-150mm wafer capability.
• Varied wafer size capability without hardware change if necessary.
• Integrated 3-axis robotic wafer handling for increased throughput and less wafer breakage.
• Optional alignmenVcooling station to prevent wafer breakage.
• Water-Cooled 1000W Magnetron/Waveguide with an AGL 2.45GHz Microwave Power Generator for better process repeatability.
• PC controller with Advanced Allwin21 Software Package with Touch screen monitor GUI.
• Can handle 50um thickness wafer
• 4 isolated gas lines with MFC's
• Pressure control for process repeatability.
• EMO, Interlocks. and Watchdog function
• GEM/SECS II (Optional)
• Light Tower (Optional)
• Small Footprint
• Made In U.S.A

Specifications:

1. Wafer Size: 3, 4, 5, 6 inch Capability.
2. Chuck Temperature: 60-110°C (±2 °C)
3. Gases: NF3 CF4 HE O2
4. Reproducibility (w-t-w): 10% 3 sigma
5. Particulate: 0.05p/cm2 > 0.3μm
6. No Damage: SO.I Volt CV-shift

7. Uniformity:

                          100mm : ± 3% (5% 3 sigma) •

                          150mm : ± 5% (8% 3 sigma)•

                          max.- min. /2 x average