Redundancy Yield Model for SRAMS
Published: |
May 7, 1999 |
Author: |
Nermine H. Ramadan, STTD Integration/Yield, Hillsboro, OR, Intel Corp. |
Abstract: |
This paper describes a model developed to calculate number of redundant good die per wafer. A block redundancy scheme is used here, where the entire defective memory subarray is replaced by a redundant element. A formula is derived to calculate the amount of improvement expected after redundancy. This improvement is given in terms of the ratio of the overall good die per wafer to the original good die per wafer after considering some key factors.... |
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