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  • New Vishay Siliconix Power MOSFETs Built on WFET Technology Offer Record-Breaking On-Resistance Times Gate Charge Figure-of-Merit: 60% Lower Than Previous State-of-the-Art

New Vishay Siliconix Power MOSFETs Built on WFET Technology Offer Record-Breaking On-Resistance Times Gate Charge Figure-of-Merit: 60% Lower Than Previous State-of-the-Art

Jun 30, 2003

Reducing gate-drain capacitance by half while maintaining superb on-resistance performance, the new Vishay Siliconix WFET�� power MOSFETs offer the industry��s best r(DS)on x Qgd figure of merit: 60% lower than previous-generation devices. Lower on-resistance means that more power can be converted in less space, and lower gate-drain capacitance means more efficient switching at high frequencies. In a breakthrough that will enable the design of much more efficient dc-to-dc converters, Vishay��s new WFET power MOSFET technology combines both capabilities in a single device.

Vishay's innovative WFET power MOSFETs use a thicker gate oxide at the bottom of the silicon trench to enable a two-thirds reduction in Crss with minimal impact on on-resistance performance. Patent-pending techniques allow a further cell-density increase, which lowers on-resistance while maintaining switching performance.

The four WFET power MOSFETs released today are designed to provide efficient high-side operation �V running cooler or handling higher output current with the same efficiency �V in notebook CPU core dc-to-dc converters in single- and multi-phase configurations with a 20-A (Si4390DY and Si7390DP) to 40-A (Si4392DY and Si7392DP) output current. The Si4390DY and Si4392DY are offered in the LITTLE FOOT SO-8 and, for improved thermal performance, the Si7390DP and Si7392DP are offered in the PowerPAK SO-8.

Link to device specification table and data sheet links:

http://www.wallstcom.com/vishay/WFET.htm

Future WFET power MOSFETs will include devices aimed at desktop computer and primary dc-to-dc converter applications with breakdown voltages ranging from 20 V to 200 V.

Samples and production quantities of the Si4390DY, Si4392DY, Si7390DP, and Si7392DP are available now with lead times of 8 to 10 weeks for larger orders.

Siliconix is a leading manufacturer of power MOSFETs, power ICs, analog switches and multiplexers for computers, cell phones, fixed communications networks, automobiles, and other consumer and industrial electronic systems. With 2002 worldwide sales of $372.9 million, the Company's facilities include a Class 1 wafer fab dedicated to the manufacture of power products in Santa Clara, California, and an affiliated Class 1 wafer fab located in Itzehoe, Germany. The Company��s products are also fabricated by subcontractors in Japan, Germany, China, and Taiwan. Assembly and test facilities include a company-owned facility in Taiwan, a joint venture in Shanghai, China, and subcontractors in the Philippines, China, Taiwan, Israel, and the United States.

Vishay, a Fortune 1,000 Company listed on the NYSE, is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, and transducers). The Company��s components can be found in products manufactured in a very broad range of industries worldwide. Vishay is headquartered in Malvern, Pennsylvania, and has plants in sixteen countries employing over 25,000 people. Vishay can be found on the Internet at http://www.vishay.com.

WFET is a trademark and LITTLE FOOT, TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Company Contact:

Vishay Siliconix, Santa Clara

Minh Nguyen

408 567-8400

minh.nguyen@vishay.com

Agency Contact:

Wall Street Communications

Bob Decker

415 409-0233

bob.decker@wallstcom.com

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