N25Q064A13ESED0G-FLASH - NOR Memory IC
Model: |
N25Q064A13ESED0G-FLASH - NOR Memory IC |
Part Number: |
2019-2 |
Category: |
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Condition: |
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Location: |
China |
Offered by: |
N25Q064A13ESED0G is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality,
advanced write protection mechanisms, and a high-speed SPI-compatible bus interface.
The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.
Features
The memory is organized as 128 (64KB) main sectors that are further divided into 16 subsectors each (2048 subsectors in total). The memory can be erased one 4KB subsector
at a time, 64KB sectors at a time, or as a whole.
The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of
64KB (sector granularity) for volatile protections
The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be
permanently locked with a PROGRAM OTP command.
The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.
Company Information:
